InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
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چکیده
منابع مشابه
InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2010
ISSN: 1931-7573,1556-276X
DOI: 10.1007/s11671-010-9605-2